Reference Report for IND20362250
Title: | Registration of Phomopsis seed decay resistant soybean germplasm MO/PSD-0259. |
Authors: | Minor, H.C., Brown, E.A., Doupnik, B.L. Jr., Elmore, R.W., Zimmerman, M.S. |
Source: | Crop Sci. 1993, 33(5):1105-1105 |
Abstract: | This F5-derived line (PI562694) originating from the cross PI417479 √ó Merschman Dallas constitutes an improved source of resistance to Diaporthe phaseolorum and Phomopsis longicolla which together cause Phomopsis seed decay. It is of early group IV maturity and determinate growth habit and has been selected for reduced shattering. In tests over 2 years in Missouri, its Phomopsis seed decay resistance was similar to that of its donor parent PI417479 (Yougetsu; from Japan) and significantly greater than that of the variety Hobbit 87. In trials over 2 years at 2 locations, yields of MO/PSD0259 were superior to those of PI417479 and were 87 and 88% of those of Hobbit 87 and Williams 82, respectively |